Inscrit le: 10 Oct 2017
|Posté le: Mer 8 Nov - 07:16 (2017) Sujet du message: Transition and Diffusion capacitance
|When P-N junction is reverse biased the depletion region act as an insulator or as a dielectric medium and the p-type an N-type region have low resistance and act as the plates.
Thus this P-N junction can be considered as a parallel plate capacitor.
This junction capacitance is called as space charge capacitance or transition capacitance and is denoted as CT .
Since reverse bias causes the majority charge carriers to move away from the junction , so the thickness of the depletion region denoted as W increases with the increase in reverse bias voltage.
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